FDS6898A
- Manufacturer's Part No.:FDS6898A
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:PowerTrench®
- Description:MOSFET 2N-CH 20V 9.4A 8SOIC
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 255000
- Available: 181657
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.42000 | US $2.42 |
10+ | US $2.17800 | US $21.78 |
30+ | US $1.69400 | US $50.82 |
100+ | US $1.39150 | US $139.15 |
500+ | US $1.33100 | US $665.50 |
1000+ | US $1.21000 | US $1210.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.FDS6898A
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesPowerTrench®
- ECCNEAR99
- MountSurface Mount
- Width4mm
- Height1.75mm
- Length5mm
- Weight187mg
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2017
- Rise Time15ns
- Resistance14MOhm
- FET FeatureLogic Level Gate
- Nominal Vgs1 V
- Part StatusActive
- Pbfree Codeyes
- Power - Max900mW
- SubcategoryFET General Purpose Power
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating9.4A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Contact PlatingTin
- Fall Time (Typ)16 ns
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time10 Weeks
- Power Dissipation2W
- Threshold Voltage500mV
- Number of Channels2
- Number of Elements2
- Turn On Delay Time10 ns
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Voltage - Rated DC20V
- Dual Supply Voltage20V
- Radiation HardeningNo
- Turn-Off Delay Time34 ns
- Element ConfigurationDual
- Max Power Dissipation2W
- Operating Temperature-55°C~150°C TJ
- Number of Terminations8
- Rds On (Max) @ Id, Vgs14m Ω @ 9.4A, 4.5V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs23nC @ 4.5V
- Gate to Source Voltage (Vgs)12V
- Continuous Drain Current (ID)9.4A
- Max Junction Temperature (Tj)150°C
- Drain to Source Breakdown Voltage20V
- Input Capacitance (Ciss) (Max) @ Vds1821pF @ 10V
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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