FDS6900AS
- Manufacturer's Part No.:FDS6900AS
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:PowerTrench®, SyncFET™
- Description:MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Delivery:
- In Stock: 1000
- Available: 203104
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.00000 | US $2.00 |
10+ | US $1.80000 | US $18.00 |
30+ | US $1.40000 | US $42.00 |
100+ | US $1.15000 | US $115.00 |
500+ | US $1.10000 | US $550.00 |
1000+ | US $1.00000 | US $1000.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.FDS6900AS
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesPowerTrench®, SyncFET™
- ECCNEAR99
- MountSurface Mount
- Width3.99mm
- Height1.5mm
- Length5mm
- Weight187mg
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2005
- Rise Time4ns
- Resistance27MOhm
- FET FeatureLogic Level Gate
- Nominal Vgs1.9 V
- Part StatusActive
- Pbfree Codeyes
- Power - Max900mW
- SubcategoryFET General Purpose Power
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating8.2A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Contact PlatingTin
- Fall Time (Typ)3 ns
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time18 Weeks
- Power Dissipation2W
- Threshold Voltage1.9V
- Number of Elements2
- Vgs(th) (Max) @ Id3V @ 250μA
- Voltage - Rated DC30V
- Dual Supply Voltage30V
- Turn-Off Delay Time23 ns
- Qualification StatusNot Qualified
- Element ConfigurationDual
- Max Power Dissipation2W
- Operating Temperature-55°C~150°C TJ
- Number of Terminations8
- Rds On (Max) @ Id, Vgs27m Ω @ 6.9A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)6.9A
- Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)8.2A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain to Source Breakdown Voltage30V
- Input Capacitance (Ciss) (Max) @ Vds600pF @ 15V
- Current - Continuous Drain (Id) @ 25°C6.9A 8.2A
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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