FDS6930B
- Manufacturer's Part No.:FDS6930B
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:PowerTrench®
- Description:MOSFET 2N-CH 30V 5.5A 8SOIC
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 4790
- Available: 315576
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.47000 | US $2.47 |
10+ | US $2.22300 | US $22.23 |
30+ | US $1.72900 | US $51.87 |
100+ | US $1.42025 | US $142.03 |
500+ | US $1.35850 | US $679.25 |
1000+ | US $1.23500 | US $1235.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.FDS6930B
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesPowerTrench®
- ECCNEAR99
- MountSurface Mount
- Width4mm
- Height1.5mm
- Length5mm
- Current55A
- Voltage30V
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2010
- Rise Time6ns
- Resistance38MOhm
- FET FeatureLogic Level Gate
- Nominal Vgs1.9 V
- Part StatusActive
- Pbfree Codeyes
- Power - Max900mW
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating5.5A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ)2 ns
- Terminal FinishTin (Sn)
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time10 Weeks
- Power Dissipation2W
- Threshold Voltage1.9V
- Number of Elements2
- Turn On Delay Time6 ns
- Vgs(th) (Max) @ Id3V @ 250μA
- Voltage - Rated DC30V
- Turn-Off Delay Time16 ns
- Qualification StatusNot Qualified
- Max Power Dissipation2W
- Operating Temperature-55°C~150°C TJ
- Number of Terminations8
- Rds On (Max) @ Id, Vgs38m Ω @ 5.5A, 10V
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)60 pF
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs3.8nC @ 5V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)5.5A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain to Source Breakdown Voltage30V
- Input Capacitance (Ciss) (Max) @ Vds412pF @ 15V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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