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FDS6982AS

  • In Stock: 11312
  • Available: 242962

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.30514US $2.31
10+US $1.53676US $15.37
30+US $1.15257US $34.58
100+US $0.92206US $92.21
500+US $0.84522US $422.61
1000+US $0.76838US $768.38

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  • Description
  • Alternatives
  • Shopping Guide
Description

The FDS6982AS is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for high-efficiency power management applications, particularly in DC-DC converters, load switching, and other power-related circuits.

Key Features:

  1. Dual Configuration: The FDS6982AS contains two N-channel MOSFETs in a single package, allowing for compact designs and efficient use of board space.

  2. Low On-Resistance (RDS(on)): The device boasts a low on-resistance, typically around 10 mΩ at a gate-source voltage (Vgs) of 10V. This low resistance minimizes conduction losses, making it suitable for high-efficiency applications.

  3. High Current Rating: The FDS6982AS can handle continuous drain currents of up to 30A, making it capable of managing significant power loads without overheating.

  4. Wide Gate-Source Voltage Range: The MOSFET operates effectively with a gate-source voltage range of ±20V, providing flexibility in various circuit designs.

  5. Fast Switching Speed: The device features fast switching characteristics, which are essential for applications requiring rapid on/off control, such as in switching power supplies.

  6. Thermal Performance: The FDS6982AS is designed to dissipate heat effectively, with a maximum junction temperature rating of 150°C. This allows for reliable operation in demanding environments.

  7. Package Type: It is available in a compact SO-8 package, which is suitable for surface mount technology (SMT) applications. This package type helps in reducing the overall footprint on the PCB.

  8. Applications: Common applications for the FDS6982AS include power management in laptops, desktops, and servers, as well as in automotive and industrial power systems.

Electrical Characteristics:

  • VDS (Drain-Source Voltage): The maximum voltage the device can withstand is typically around 30V.
  • ID (Continuous Drain Current): The maximum continuous drain current is rated at 30A.
  • Gate Threshold Voltage (VGS(th)): The threshold voltage at which the MOSFET begins to conduct is typically between 1V to 2.5V.

Conclusion:

The FDS6982AS from ON Semiconductor is a versatile and efficient dual N-channel MOSFET that is well-suited for a variety of power management applications. Its low on-resistance, high current handling capability, and compact package make it an excellent choice for designers looking to optimize performance and efficiency in their electronic circuits.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

SHIPPING GUIDE

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