FDS9435A
- Manufacturer's Part No.:FDS9435A
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- Series:PowerTrench®
- Description:MOSFET P-CH 30V 5.3A 8-SOIC
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- In Stock: 5000
- Available: 392632
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.58140 | US $0.58 |
10+ | US $0.38760 | US $3.88 |
30+ | US $0.29070 | US $8.72 |
100+ | US $0.23256 | US $23.26 |
500+ | US $0.21318 | US $106.59 |
1000+ | US $0.19380 | US $193.80 |
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- Description
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- Shopping Guide
The FDS9435A is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for high-efficiency power management applications, making it suitable for use in various electronic devices, including power supplies, DC-DC converters, and motor control circuits.
Key Features:
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Configuration: The FDS9435A features a dual configuration, meaning it contains two N-channel MOSFETs in a single package. This allows for compact designs and efficient use of board space.
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Package Type: It is typically available in a surface-mount package, such as the SO-8 (Small Outline 8-lead) package, which facilitates easy integration into printed circuit boards (PCBs) and helps in minimizing parasitic inductance and resistance.
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Voltage and Current Ratings: The FDS9435A is rated for a maximum drain-source voltage (V_DS) of around 30V, making it suitable for low to medium voltage applications. It can handle continuous drain currents (I_D) of up to 20A, depending on the thermal management and PCB layout.
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R_DS(on): One of the critical specifications of the FDS9435A is its low on-resistance (R_DS(on)), which is typically around 10 mΩ at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced conduction losses, enhancing overall efficiency in power applications.
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Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically in the range of 1V to 2.5V, allowing for easy drive with standard logic levels. This feature makes it compatible with various control circuits.
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Thermal Performance: The FDS9435A is designed to operate efficiently at elevated temperatures, with a maximum junction temperature (T_J) of 150°C. Proper thermal management is essential to ensure reliable operation, especially in high-current applications.
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Applications: This MOSFET is widely used in applications such as synchronous rectification, load switching, and power management circuits in consumer electronics, automotive systems, and industrial equipment.
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Switching Characteristics: The FDS9435A exhibits fast switching speeds, which are beneficial for high-frequency applications. Its low gate charge (Q_g) allows for quick turn-on and turn-off times, reducing switching losses.
Summary:
The FDS9435A from ON Semiconductor is a versatile and efficient dual N-channel MOSFET that is well-suited for a variety of power management applications. Its low on-resistance, high current handling capability, and compact package make it an excellent choice for designers looking to optimize performance and efficiency in their electronic circuits.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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