FDS9958-F085
- Manufacturer's Part No.:FDS9958-F085
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:Automotive, AEC-Q101, PowerTrench®
- Description:MOSFET 2P-CH 60V 2.9A 8-SOIC
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Delivery:
- In Stock: 118660
- Available: 110660
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $150.00000 | US $150.00 |
10+ | US $130.00000 | US $1300.00 |
30+ | US $118.00000 | US $3540.00 |
100+ | US $108.00000 | US $10800.00 |
500+ | US $105.00000 | US $52500.00 |
1000+ | US $100.00000 | US $100000.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.FDS9958-F085
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesAutomotive, AEC-Q101, PowerTrench®
- ECCNEAR99
- MountSurface Mount
- Weight230.4mg
- FET Type2 P-Channel (Dual)
- PackagingTape & Reel (TR)
- Published2017
- Rise Time3ns
- FET FeatureLogic Level Gate
- Part StatusActive
- Pbfree Codeyes
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ)6 ns
- Lifecycle StatusACTIVE (Last Updated: 1 week ago)
- Factory Lead Time4 Weeks
- Power Dissipation2W
- Number of Elements2
- Turn On Delay Time6 ns
- Vgs(th) (Max) @ Id3V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time27 ns
- Element ConfigurationDual
- Max Power Dissipation900mW
- Operating Temperature-55°C~150°C TJ
- Number of Terminations8
- Rds On (Max) @ Id, Vgs105m Ω @ 2.9A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)54 mJ
- Continuous Drain Current (ID)2.9A
- Drain to Source Voltage (Vdss)60V
- Drain-source On Resistance-Max0.105Ohm
- Pulsed Drain Current-Max (IDM)12A
- Drain to Source Breakdown Voltage-60V
- Input Capacitance (Ciss) (Max) @ Vds1020pF @ 30V
Environmental & Export Classifications
- HTSUS8541.21.0095
- RoHS StatusROHS3 Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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