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FDT458P

  • In Stock: 16000
  • Available: 407517

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.03500US $1.04
10+US $0.69000US $6.90
30+US $0.51750US $15.52
100+US $0.41400US $41.40
500+US $0.37950US $189.75
1000+US $0.34500US $345.00

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  • Description
  • Alternatives
  • Shopping Guide
Description

The FDT458P is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for various applications, including power management, switching, and amplification in electronic circuits.

Key Features:

  1. Type: N-channel MOSFET
  2. Package: Typically available in a TO-220 package, which provides good thermal performance and ease of mounting on heat sinks.
  3. Voltage Rating: The FDT458P has a maximum drain-source voltage (V_DS) rating of around 60V, making it suitable for medium-voltage applications.
  4. Current Rating: It can handle a continuous drain current (I_D) of approximately 30A, allowing it to drive significant loads.
  5. R_DS(on): The on-resistance (R_DS(on)) is low, typically in the range of a few milliohms, which minimizes power loss during operation and enhances efficiency.
  6. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is relatively low, allowing for easy drive with standard logic levels.
  7. Switching Speed: The FDT458P features fast switching capabilities, making it suitable for high-frequency applications.
  8. Thermal Characteristics: The device has a high thermal resistance, which allows it to operate efficiently at elevated temperatures. It is designed to dissipate heat effectively, which is crucial for maintaining performance and reliability.

Applications:

  • Power Supply Circuits: Used in DC-DC converters and power management systems.
  • Motor Control: Suitable for driving motors in various applications, including robotics and industrial automation.
  • Lighting Control: Can be used in LED drivers and lighting control systems.
  • Switching Regulators: Ideal for use in switching power supplies due to its fast switching characteristics.

Electrical Characteristics:

  • Gate-Source Voltage (V_GS): Maximum rating typically around ±20V.
  • Body Diode: The FDT458P includes an intrinsic body diode, which allows for reverse current flow and can be beneficial in certain applications.

Reliability:

The FDT458P is designed to meet stringent reliability standards, making it suitable for use in automotive, industrial, and consumer electronics. It is often characterized by its robustness and long operational life.

Conclusion:

The FDT458P from ON Semiconductor is a versatile and efficient N-channel MOSFET that is well-suited for a wide range of applications requiring reliable switching and power management. Its combination of high current handling, low on-resistance, and fast switching capabilities makes it a popular choice among engineers and designers in the electronics industry.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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