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FDV301N
- Manufacturer's Part No.:FDV301N
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET N-CH 25V 220MA SOT-23
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- In Stock: 649000
- Available: 1546063
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.08910 | US $0.09 |
10+ | US $0.05940 | US $0.59 |
30+ | US $0.04455 | US $1.34 |
100+ | US $0.03564 | US $3.56 |
500+ | US $0.03267 | US $16.33 |
1000+ | US $0.02970 | US $29.70 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.FDV301N
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- Series-
- Time@Peak Reflow Temperature-Max (s)30
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Part StatusActive
- Operating Temperature-55°C~150°C TJ
- Factory Lead Time10 Weeks
- Lifecycle StatusACTIVE (Last Updated: 15 hours ago)
- MountSurface Mount
- Number of Pins3
- PackagingTape & Reel (TR)
- SubcategoryFET General Purpose Power
- Number of Terminations3
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Number of Elements1
- Lead FreeLead Free
- Radiation HardeningNo
- Published1999
- Pbfree Codeyes
- Current Rating220mA
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Voltage - Rated DC25V
- Contact PlatingTin
- Height1.11mm
- Length2.92mm
- Width3.05mm
- Mounting TypeSurface Mount
- Transistor Element MaterialSILICON
- Element ConfigurationSingle
- Transistor ApplicationSWITCHING
- TerminationSMD/SMT
- Power Dissipation350mW
- Max Junction Temperature (Tj)150°C
- Number of Channels1
- Voltage50V
- Current2A
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max350mW Ta
- Manufacturer Package IdentifierSOT−23 (TO−236) CASE 318−08 ISSUE AR
- Turn On Delay Time3.2 ns
- Turn-Off Delay Time3.5 ns
- Operating ModeENHANCEMENT MODE
- Continuous Drain Current (ID)220mA
- Resistance4Ohm
- Gate to Source Voltage (Vgs)8V
- Drain to Source Breakdown Voltage25V
- FET TypeN-Channel
- Vgs(th) (Max) @ Id1.06V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds9.5pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs0.7nC @ 4.5V
- Vgs (Max)±8V
- Rise Time6ns
- Fall Time (Typ)6 ns
- Nominal Vgs850 mV
- Dual Supply Voltage25V
- Current - Continuous Drain (Id) @ 25°C220mA Ta
- Drive Voltage (Max Rds On,Min Rds On)2.7V 4.5V
- Rds On (Max) @ Id, Vgs4 Ω @ 400mA, 4.5V
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- REACH SVHCNo SVHC
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