FDV303N

The FDV303N is a specific type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Rochester Electronics. This component is designed for various electronic applications, particularly in switching and amplification tasks.

Key Features:

1. Type: N-channel MOSFET

   • The N-channel configuration allows for efficient switching and is commonly used in power management applications.

2. Voltage Rating:

   • The FDV303N typically has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low to moderate voltage applications.

3. Current Rating:

   • It can handle a continuous drain current (I_D) of approximately 2.5A, which is adequate for many consumer and industrial applications.

4. Gate Threshold Voltage:

   • The gate threshold voltage (V_GS(th)) is usually in the range of 1V to 3V, indicating the voltage required to turn the MOSFET on. This low threshold allows for easy interfacing with low-voltage logic levels.

5. On-Resistance:

   • The on-resistance (R_DS(on)) is typically low, around 0.5 ohms at a specified gate voltage, which minimizes power loss during operation and enhances efficiency.

6. Package Type:

   • The FDV303N is often available in a surface-mount package, such as SOT-23, which is compact and suitable for modern PCB designs.

7. Applications:

   • This MOSFET is widely used in applications such as power management circuits, motor drivers, and signal switching. Its characteristics make it ideal for battery-powered devices, where efficiency is crucial.

8. Thermal Characteristics:

   • The device is designed to operate within a specified temperature range, typically from -55°C to +150°C, ensuring reliability in various environmental conditions.

Electrical Characteristics:

• Gate-Source Voltage (V_GS): Maximum rating usually around ±20V.
• Drain-Source Breakdown Voltage (V(BR)DSS): Minimum of 30V.
• Input Capacitance (C_iss): Generally low, which contributes to faster switching speeds.

Conclusion:

The FDV303N from Rochester Electronics is a versatile and efficient N-channel MOSFET suitable for a wide range of electronic applications. Its low on-resistance, moderate voltage and current ratings, and compact packaging make it an excellent choice for designers looking to optimize performance in their circuits. Whether used in power management, signal switching, or motor control, the FDV303N provides reliable operation and efficiency.