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FF11MR12W1M1B11BOMA1

  • Available: 570

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $245.43000US $245.43
10+US $212.70600US $2127.06
30+US $193.07160US $5792.15
100+US $176.70960US $17670.96
500+US $171.80100US $85900.50
1000+US $163.62000US $163620.00

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    FF11MR12W1M1B11BOMA1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    CoolSiC™+
  • ECCN
    EAR99
  • Height
    12.35mm
  • FET Type
    2 N-Channel (Dual)
  • Packaging
    Tray
  • Published
    2008
  • FET Feature
    Silicon Carbide (SiC)
  • Part Status
    Active
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Chassis Mount
  • Surface Mount
    NO
  • Terminal Form
    UNSPECIFIED
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    Module
  • Case Connection
    ISOLATED
  • Factory Lead Time
    16 Weeks
  • Power Dissipation
    20mW
  • Terminal Position
    UPPER
  • Number of Channels
    2
  • Number of Elements
    2
  • Turn On Delay Time
    25.1 ns
  • Vgs(th) (Max) @ Id
    5.55V @ 40mA
  • Turn-Off Delay Time
    64.3 ns
  • Operating Temperature
    -40°C~150°C TJ
  • Number of Terminations
    18
  • Rds On (Max) @ Id, Vgs
    11m Ω @ 100A, 15V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Gate Charge (Qg) (Max) @ Vgs
    250nC @ 15V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    100A
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain to Source Voltage (Vdss)
    1200V 1.2kV
  • Manufacturer Package Identifier
    AG-EASY1BM-2
  • Input Capacitance (Ciss) (Max) @ Vds
    7950pF @ 800V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-XUFM-X18
  • Moisture Sensitivity Level (MSL)
    Not Applicable

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