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FF600R12IS4FBOSA1

  • Available: 1961

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.00000US $0.00

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    FF600R12IS4FBOSA1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Modules
  • Series
    -
  • ECCN
    EAR99
  • Input
    Standard
  • Pin Count
    11
  • Published
    2002
  • VCEsat-Max
    3.75 V
  • Part Status
    Obsolete
  • Pbfree Code
    no
  • Power - Max
    3700W
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    270 ns
  • Configuration
    2 Independent
  • Mounting Type
    Chassis Mount
  • Surface Mount
    NO
  • Terminal Form
    UNSPECIFIED
  • NTC Thermistor
    Yes
  • Package / Case
    Module
  • Case Connection
    ISOLATED
  • Terminal Position
    UPPER
  • Number of Elements
    2
  • Qualification Status
    Not Qualified
  • Operating Temperature
    -40°C~125°C
  • Polarity/Channel Type
    N-CHANNEL
  • Reach Compliance Code
    compliant
  • Number of Terminations
    7
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    3.75V @ 15V, 600A
  • Gate-Emitter Voltage-Max
    20V
  • Turn Off Time-Nom (toff)
    630 ns
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Power Dissipation-Max (Abs)
    3700W
  • Transistor Element Material
    SILICON
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Current - Collector (Ic) (Max)
    600A
  • Input Capacitance (Cies) @ Vce
    39nF @ 25V
  • Current - Collector Cutoff (Max)
    5mA
  • Voltage - Collector Emitter Breakdown (Max)
    1200V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS Compliant
  • JESD-30 Code
    R-XUFM-X7
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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  • Delivery Time

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