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FF800R12KF4

  • Available: 97

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2525.60000US $2525.60
10+US $2255.00000US $22550.00
30+US $2074.60000US $62238.00
100+US $1912.24000US $191224.00
500+US $1894.20000US $947100.00
1000+US $1804.00000US $1804000.00

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    FF800R12KF4
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Modules
  • Series
    -
  • ECCN
    EAR99
  • Input
    Standard
  • Mount
    Screw
  • Pin Count
    10
  • Published
    2012
  • VCEsat-Max
    3.2 V
  • Part Status
    Active
  • Pbfree Code
    no
  • Power - Max
    5000W
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    800 ns
  • Configuration
    2 Independent
  • Mounting Type
    Chassis Mount
  • Terminal Form
    UNSPECIFIED
  • NTC Thermistor
    No
  • Number of Pins
    10
  • Package / Case
    Module
  • Case Connection
    ISOLATED
  • Factory Lead Time
    36 Weeks
  • Power Dissipation
    5kW
  • Terminal Position
    UPPER
  • Number of Elements
    2
  • Element Configuration
    Dual
  • Max Collector Current
    800A
  • Operating Temperature
    -40°C~125°C
  • Polarity/Channel Type
    N-CHANNEL
  • Number of Terminations
    10
  • Vce(on) (Max) @ Vge, Ic
    3.2V @ 15V, 800A
  • Gate-Emitter Voltage-Max
    20V
  • Turn Off Time-Nom (toff)
    1150 ns
  • Transistor Element Material
    SILICON
  • Input Capacitance (Cies) @ Vce
    55nF @ 25V
  • Collector Emitter Voltage (VCEO)
    1.2kV
  • Current - Collector Cutoff (Max)
    16mA
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Collector Emitter Saturation Voltage
    2.7V
  • Voltage - Collector Emitter Breakdown (Max)
    1200V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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