FGA15N120ANTDTU
- Manufacturer's Part No.:FGA15N120ANTDTU
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:IGBT 1200V 30A 186W TO3P
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 2000
- Available: 6933
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.00000 | US $2.00 |
10+ | US $1.80000 | US $18.00 |
30+ | US $1.40000 | US $42.00 |
100+ | US $1.15000 | US $115.00 |
500+ | US $1.10000 | US $550.00 |
1000+ | US $1.00000 | US $1000.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.FGA15N120ANTDTU
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- Series-
- Polarity/Channel TypeN-CHANNEL
- Package / CaseTO-3P-3, SC-65-3
- Part StatusObsolete
- Operating Temperature-55°C~150°C TJ
- MountThrough Hole
- Number of Pins3
- PackagingTube
- SubcategoryInsulated Gate BIP Transistors
- Lead FreeLead Free
- Published2006
- Pbfree Codeyes
- Current Rating15A
- Voltage - Rated DC1.2kV
- Max Power Dissipation186W
- Voltage - Collector Emitter Breakdown (Max)1200V
- Mounting TypeThrough Hole
- Element ConfigurationSingle
- Collector Emitter Voltage (VCEO)1.2kV
- Max Collector Current30A
- Collector Emitter Breakdown Voltage1.2kV
- Power Dissipation186W
- Collector Emitter Saturation Voltage2.4V
- Fall Time-Max (tf)180ns
- Continuous Drain Current (ID)15A
- Drain to Source Breakdown Voltage1.2kV
- Input TypeStandard
- Reverse Recovery Time330ns
- Test Condition600V, 15A, 10 Ω, 15V
- IGBT TypeNPT and Trench
- Gate Charge120nC
- Current - Collector Pulsed (Icm)45A
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max8.5V
- Switching Energy3mJ (on), 600μJ (off)
- Td (on/off) @ 25°C15ns/160ns
- Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 15A
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- REACH SVHCNo SVHC
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