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FGA30N120FTDTU

  • Available: 85

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $7.05600US $7.06
10+US $6.35040US $63.50
30+US $4.93920US $148.18
100+US $4.05720US $405.72
500+US $3.88080US $1940.40
1000+US $3.52800US $3528.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    FGA30N120FTDTU
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    5mm
  • Height
    20.1mm
  • Length
    15.8mm
  • Weight
    6.401g
  • HTS Code
    8541.29.00.95
  • IGBT Type
    Trench Field Stop
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2004
  • Input Type
    Standard
  • Gate Charge
    208nC
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    167 ns
  • Mounting Type
    Through Hole
  • Number of Pins
    3
  • Package / Case
    TO-3P-3, SC-65-3
  • Terminal Finish
    Tin (Sn)
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    10 Weeks
  • Power Dissipation
    339W
  • Number of Elements
    1
  • Turn On Delay Time
    31 ns
  • Turn-Off Delay Time
    198 ns
  • Qualification Status
    Not Qualified
  • Element Configuration
    Single
  • Max Collector Current
    60A
  • Max Power Dissipation
    339W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    730ns
  • Number of Terminations
    3
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 30A
  • Gate-Emitter Voltage-Max
    25V
  • Turn Off Time-Nom (toff)
    575 ns
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Gate-Emitter Thr Voltage-Max
    7.5V
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Collector Emitter Voltage (VCEO)
    1.2kV
  • Current - Collector Pulsed (Icm)
    90A
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Collector Emitter Saturation Voltage
    2V
  • Voltage - Collector Emitter Breakdown (Max)
    1200V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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