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FGA40N65SMD

  • In Stock: 62600
  • Available: 24040

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.85516US $2.86
10+US $2.56964US $25.70
30+US $1.99861US $59.96
100+US $1.64172US $164.17
500+US $1.57034US $785.17
1000+US $1.42758US $1427.58

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    FGA40N65SMD
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    5mm
  • Height
    20.1mm
  • Length
    16.2mm
  • Weight
    6.401g
  • HTS Code
    8541.29.00.95
  • IGBT Type
    Field Stop
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2008
  • Input Type
    Standard
  • Gate Charge
    119nC
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Through Hole
  • Rise Time-Max
    28ns
  • Number of Pins
    3
  • Package / Case
    TO-3P-3, SC-65-3
  • Test Condition
    400V, 40A, 6 Ω, 15V
  • Contact Plating
    Tin
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Switching Energy
    820μJ (on), 260μJ (off)
  • Factory Lead Time
    6 Weeks
  • Power Dissipation
    349W
  • Additional Feature
    LOW CONDUCTION LOSS
  • Fall Time-Max (tf)
    17ns
  • Number of Elements
    1
  • Turn On Delay Time
    12 ns
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    12ns/92ns
  • Turn-Off Delay Time
    92 ns
  • Element Configuration
    Single
  • Max Collector Current
    80A
  • Max Power Dissipation
    349W
  • Operating Temperature
    -55°C~175°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    42 ns
  • Number of Terminations
    3
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 40A
  • Gate-Emitter Voltage-Max
    20V
  • Transistor Element Material
    SILICON
  • Gate-Emitter Thr Voltage-Max
    6V
  • Collector Emitter Voltage (VCEO)
    650V
  • Current - Collector Pulsed (Icm)
    120A
  • Collector Emitter Breakdown Voltage
    650V
  • Collector Emitter Saturation Voltage
    2.5V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    Not Applicable

SHIPPING GUIDE

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  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

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