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FGA50N100BNTD2

  • Available: 187

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $12.71560US $12.72
10+US $11.44404US $114.44
30+US $8.90092US $267.03
100+US $7.31147US $731.15
500+US $6.99358US $3496.79
1000+US $6.35780US $6357.80

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    FGA50N100BNTD2
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    5mm
  • Height
    20.1mm
  • Length
    15.8mm
  • Weight
    6.401g
  • HTS Code
    8541.29.00.95
  • IGBT Type
    NPT and Trench
  • Packaging
    Tube
  • Published
    2013
  • Input Type
    Standard
  • Gate Charge
    257nC
  • Part Status
    Active
  • Pbfree Code
    yes
  • Power - Max
    156W
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    102 ns
  • Mounting Type
    Through Hole
  • Number of Pins
    3
  • Package / Case
    TO-3P-3, SC-65-3
  • Test Condition
    600V, 60A, 10 Ω, 15V
  • Terminal Finish
    Tin (Sn)
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    8 Weeks
  • Fall Time-Max (tf)
    100ns
  • Number of Elements
    1
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    34ns/243ns
  • Element Configuration
    Single
  • Max Collector Current
    50A
  • Max Power Dissipation
    156W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    75 ns
  • Number of Terminations
    3
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2.9V @ 15V, 60A
  • Gate-Emitter Voltage-Max
    25V
  • Turn Off Time-Nom (toff)
    308 ns
  • Transistor Element Material
    SILICON
  • Gate-Emitter Thr Voltage-Max
    7V
  • Collector Emitter Voltage (VCEO)
    1kV
  • Current - Collector Pulsed (Icm)
    200A
  • Collector Emitter Breakdown Voltage
    1kV
  • Collector Emitter Saturation Voltage
    1.5V
  • Voltage - Collector Emitter Breakdown (Max)
    1000V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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