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FGA50N100BNTDTU

  • In Stock: 19523
  • Available: 450

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $6.78786US $6.79
10+US $6.10907US $61.09
30+US $4.75150US $142.55
100+US $3.90302US $390.30
500+US $3.73332US $1866.66
1000+US $3.39393US $3393.93

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    FGA50N100BNTDTU
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    5mm
  • Height
    20.1mm
  • Length
    15.8mm
  • Weight
    6.401g
  • HTS Code
    8541.29.00.95
  • IGBT Type
    NPT and Trench
  • Packaging
    Tube
  • Published
    2013
  • Input Type
    Standard
  • Gate Charge
    275nC
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    460 ns
  • Mounting Type
    Through Hole
  • Number of Pins
    3
  • Package / Case
    TO-3P-3, SC-65-3
  • Terminal Finish
    Tin (Sn)
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    5 Weeks
  • Power Dissipation
    156W
  • Fall Time-Max (tf)
    250ns
  • Number of Elements
    1
  • Radiation Hardening
    No
  • Element Configuration
    Single
  • Max Collector Current
    50A
  • Max Power Dissipation
    156W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    1.5μs
  • Number of Terminations
    3
  • Transistor Application
    AUTOMOTIVE IGNITION
  • Vce(on) (Max) @ Vge, Ic
    2.9V @ 15V, 60A
  • Gate-Emitter Voltage-Max
    25V
  • Turn Off Time-Nom (toff)
    760 ns
  • Transistor Element Material
    SILICON
  • Gate-Emitter Thr Voltage-Max
    7V
  • Collector Emitter Voltage (VCEO)
    1kV
  • Current - Collector Pulsed (Icm)
    100A
  • Collector Emitter Breakdown Voltage
    1kV
  • Collector Emitter Saturation Voltage
    2.5V
  • Voltage - Collector Emitter Breakdown (Max)
    1000V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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