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FGAF40N60SMD

  • Available: 81

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $5.11560US $5.12
10+US $4.60404US $46.04
30+US $3.58092US $107.43
100+US $2.94147US $294.15
500+US $2.81358US $1406.79
1000+US $2.55780US $2557.80

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    FGAF40N60SMD
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    3.2mm
  • Height
    26.7mm
  • Length
    15.7mm
  • Weight
    6.962g
  • HTS Code
    8541.29.00.95
  • IGBT Type
    Field Stop
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2013
  • Input Type
    Standard
  • Gate Charge
    119nC
  • Part Status
    Active
  • Pbfree Code
    yes
  • Power - Max
    115W
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    37 ns
  • Mounting Type
    Through Hole
  • Number of Pins
    3
  • Package / Case
    TO-3P-3 Full Pack
  • Test Condition
    400V, 40A, 6 Ω, 15V
  • Case Connection
    ISOLATED
  • Terminal Finish
    Tin (Sn)
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Switching Energy
    870μJ (on), 260μJ (off)
  • Factory Lead Time
    8 Weeks
  • Fall Time-Max (tf)
    17ns
  • Number of Elements
    1
  • Td (on/off) @ 25°C
    12ns/92ns
  • Element Configuration
    Single
  • Max Collector Current
    80A
  • Max Power Dissipation
    115W
  • Operating Temperature
    -55°C~175°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    36 ns
  • Number of Terminations
    3
  • Transistor Application
    MOTOR CONTROL
  • Vce(on) (Max) @ Vge, Ic
    1.9V @ 15V, 40A
  • Gate-Emitter Voltage-Max
    20V
  • Turn Off Time-Nom (toff)
    132 ns
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Gate-Emitter Thr Voltage-Max
    6V
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Collector Emitter Voltage (VCEO)
    600V
  • Current - Collector Pulsed (Icm)
    120A
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2.1V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    Not Applicable

SHIPPING GUIDE

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  • Delivery Time

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