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FGB20N60SFD

  • Available: 39155

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $4.61790US $4.62
10+US $4.15611US $41.56
30+US $3.23253US $96.98
100+US $2.65529US $265.53
500+US $2.53985US $1269.93
1000+US $2.30895US $2308.95

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    FGB20N60SFD
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    9.65mm
  • Height
    4.83mm
  • Length
    10.67mm
  • Weight
    1.31247g
  • HTS Code
    8541.29.00.95
  • IGBT Type
    Field Stop
  • Packaging
    Tape & Reel (TR)
  • Published
    2013
  • Input Type
    Standard
  • Gate Charge
    65nC
  • Part Status
    Active
  • Pbfree Code
    yes
  • Power - Max
    208W
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    28 ns
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Number of Pins
    3
  • Package / Case
    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Test Condition
    400V, 20A, 10 Ω, 15V
  • Case Connection
    COLLECTOR
  • Terminal Finish
    Tin (Sn)
  • Base Part Number
    FGB20N60
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Switching Energy
    370μJ (on), 160μJ (off)
  • Factory Lead Time
    5 Weeks
  • Power Dissipation
    83W
  • Additional Feature
    LOW CONDUCTION LOSS
  • Fall Time-Max (tf)
    48ns
  • Number of Elements
    1
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    13ns/90ns
  • Element Configuration
    Single
  • Max Breakdown Voltage
    600V
  • Max Collector Current
    40A
  • Max Power Dissipation
    208W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    34 ns
  • Number of Terminations
    2
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2.8V @ 15V, 20A
  • Gate-Emitter Voltage-Max
    20V
  • Turn Off Time-Nom (toff)
    123 ns
  • Transistor Element Material
    SILICON
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • Collector Emitter Voltage (VCEO)
    600V
  • Current - Collector Pulsed (Icm)
    60A
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2.8V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PSSO-G2
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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  • Delivery Time

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