FGD3N60LSDTM
- Manufacturer's Part No.:FGD3N60LSDTM
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:IGBT 600V 6A 40W DPAK
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- In Stock: 494576
- Available: 183926
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $6.00000 | US $6.00 |
10+ | US $5.40000 | US $54.00 |
30+ | US $4.20000 | US $126.00 |
100+ | US $3.45000 | US $345.00 |
500+ | US $3.30000 | US $1650.00 |
1000+ | US $3.00000 | US $3000.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.FGD3N60LSDTM
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- Series-
- ECCNEAR99
- MountSurface Mount
- Width6.1mm
- Height2.3mm
- Length6.6mm
- Weight260.37mg
- HTS Code8541.29.00.95
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2004
- Input TypeStandard
- Gate Charge12.5nC
- Part StatusActive
- Pbfree Codeyes
- SubcategoryInsulated Gate BIP Transistors
- REACH StatusREACH Unaffected
- Turn On Time85 ns
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating6A
- Number of Pins3
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Test Condition480V, 3A, 470 Ω, 10V
- Case ConnectionCOLLECTOR
- Terminal FinishTin (Sn)
- Base Part NumberFGD3N60
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Switching Energy250μJ (on), 1mJ (off)
- Factory Lead Time6 Weeks
- Additional FeatureLOW CONDUCTION LOSS
- Number of Elements1
- Voltage - Rated DC600V
- Radiation HardeningNo
- Td (on/off) @ 25°C40ns/600ns
- Element ConfigurationSingle
- Max Breakdown Voltage600V
- Max Collector Current6A
- Max Power Dissipation40W
- Polarity/Channel TypeN-CHANNEL
- Reverse Recovery Time234 ns
- Number of Terminations2
- Transistor ApplicationMOTOR CONTROL
- Vce(on) (Max) @ Vge, Ic1.5V @ 10V, 3A
- Gate-Emitter Voltage-Max20V
- Turn Off Time-Nom (toff)1420 ns
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Gate-Emitter Thr Voltage-Max5V
- Collector Emitter Voltage (VCEO)600V
- Current - Collector Pulsed (Icm)25A
- Collector Emitter Breakdown Voltage600V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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