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FGD3N60UNDF

  • In Stock: 9970
  • Available: 244691

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $9.64000US $9.64
10+US $8.67600US $86.76
30+US $6.74800US $202.44
100+US $5.54300US $554.30
500+US $5.30200US $2651.00
1000+US $4.82000US $4820.00

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    FGD3N60UNDF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    6.1mm
  • Height
    2.3mm
  • Length
    6.6mm
  • Weight
    260.37mg
  • HTS Code
    8541.29.00.95
  • IGBT Type
    NPT
  • Lead Free
    Lead Free
  • Packaging
    Cut Tape (CT)
  • Published
    2013
  • Input Type
    Standard
  • Gate Charge
    1.6nC
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    7.4 ns
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Number of Pins
    3
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Test Condition
    400V, 3A, 10 Ω, 15V
  • Case Connection
    COLLECTOR
  • Terminal Finish
    Tin (Sn)
  • Base Part Number
    FGD3N60
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Switching Energy
    52μJ (on), 30μJ (off)
  • Factory Lead Time
    7 Weeks
  • Power Dissipation
    60W
  • Number of Elements
    1
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    5.5ns/22ns
  • Element Configuration
    Single
  • Max Breakdown Voltage
    600V
  • Max Collector Current
    6A
  • Max Power Dissipation
    60W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    21ns
  • Number of Terminations
    2
  • Transistor Application
    MOTOR CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2.52V @ 15V, 3A
  • Gate-Emitter Voltage-Max
    20V
  • Turn Off Time-Nom (toff)
    146 ns
  • Transistor Element Material
    SILICON
  • Gate-Emitter Thr Voltage-Max
    8.5V
  • Collector Emitter Voltage (VCEO)
    600V
  • Current - Collector Pulsed (Icm)
    9A
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2.4V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PSSO-G2
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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