FGH40N60UFTU
- Manufacturer's Part No.:FGH40N60UFTU
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:IGBT 600V 80A 290W TO247
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 100000
- Available: 28953
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $19.00000 | US $19.00 |
10+ | US $17.10000 | US $171.00 |
30+ | US $13.30000 | US $399.00 |
100+ | US $10.92500 | US $1092.50 |
500+ | US $10.45000 | US $5225.00 |
1000+ | US $9.50000 | US $9500.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.FGH40N60UFTU
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- Series-
- ECCNEAR99
- MountThrough Hole
- Width4.7mm
- Height20.6mm
- Length15.6mm
- Weight6.39g
- HTS Code8541.29.00.95
- IGBT TypeField Stop
- Lead FreeLead Free
- PackagingTube
- Published2015
- Input TypeStandard
- Gate Charge120nC
- Part StatusActive
- Pbfree Codeyes
- Power - Max290W
- SubcategoryInsulated Gate BIP Transistors
- REACH StatusREACH Unaffected
- Turn On Time110 ns
- JEDEC-95 CodeTO-247AB
- Mounting TypeThrough Hole
- Number of Pins3
- Package / CaseTO-247-3
- Test Condition400V, 40A, 10 Ω, 15V
- Case ConnectionCOLLECTOR
- Terminal FinishTin (Sn)
- Base Part NumberFGH40N60
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Switching Energy1.19mJ (on), 460μJ (off)
- Factory Lead Time6 Weeks
- Additional FeatureLOW CONDUCTION LOSS
- Fall Time-Max (tf)100ns
- Number of Elements1
- Turn On Delay Time24 ns
- Radiation HardeningNo
- Td (on/off) @ 25°C24ns/112ns
- Turn-Off Delay Time112 ns
- Element ConfigurationSingle
- Max Collector Current80A
- Max Power Dissipation290W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL
- Number of Terminations3
- Transistor ApplicationPOWER CONTROL
- Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 40A
- Gate-Emitter Voltage-Max20V
- Turn Off Time-Nom (toff)190 ns
- Transistor Element MaterialSILICON
- Gate-Emitter Thr Voltage-Max6.5V
- Collector Emitter Voltage (VCEO)600V
- Current - Collector Pulsed (Icm)120A
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage1.8V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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