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FGH40T65SHDF-F155

  • Available: 425

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $9.50000US $9.50
10+US $8.55000US $85.50
30+US $6.65000US $199.50
100+US $5.46250US $546.25
500+US $5.22500US $2612.50
1000+US $4.75000US $4750.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    FGH40T65SHDF-F155
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Weight
    6.39g
  • IGBT Type
    Field Stop
  • Packaging
    Tube
  • Published
    2016
  • Input Type
    Standard
  • Gate Charge
    68nC
  • Part Status
    Active
  • Pbfree Code
    yes
  • Power - Max
    268W
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Through Hole
  • Number of Pins
    3
  • Package / Case
    TO-247-3
  • Test Condition
    400V, 40A, 6 Ω, 15V
  • Contact Plating
    Tin
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Switching Energy
    1.22mJ (on), 440μJ (off)
  • Factory Lead Time
    6 Weeks
  • Td (on/off) @ 25°C
    18ns/64ns
  • Element Configuration
    Single
  • Max Collector Current
    80A
  • Max Power Dissipation
    268W
  • Operating Temperature
    -55°C~175°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    101 ns
  • Vce(on) (Max) @ Vge, Ic
    1.81V @ 15V, 40A
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    7.5V
  • Collector Emitter Voltage (VCEO)
    650V
  • Current - Collector Pulsed (Icm)
    120A
  • Collector Emitter Breakdown Voltage
    650V
  • Collector Emitter Saturation Voltage
    1.45V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    Not Applicable

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