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FGH40T65UPD

  • Available: 3703

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $4.89510US $4.90
10+US $4.40559US $44.06
30+US $3.42657US $102.80
100+US $2.81468US $281.47
500+US $2.69231US $1346.16
1000+US $2.44755US $2447.55

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    FGH40T65UPD
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    4.82mm
  • Height
    20.82mm
  • Length
    15.87mm
  • Weight
    6.39g
  • HTS Code
    8541.29.00.95
  • IGBT Type
    Trench Field Stop
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2013
  • Input Type
    Standard
  • Gate Charge
    177nC
  • Part Status
    Not For New Designs
  • Pbfree Code
    yes
  • Power - Max
    268W
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    57 ns
  • JEDEC-95 Code
    TO-247AB
  • Mounting Type
    Through Hole
  • Number of Pins
    3
  • Package / Case
    TO-247-3
  • Test Condition
    400V, 40A, 7 Ω, 15V
  • Case Connection
    COLLECTOR
  • Contact Plating
    Tin
  • Lifecycle Status
    ACTIVE, NOT REC (Last Updated: 4 days ago)
  • Switching Energy
    1.59mJ (on), 580μJ (off)
  • Factory Lead Time
    50 Weeks
  • Fall Time-Max (tf)
    22ns
  • Number of Elements
    1
  • Td (on/off) @ 25°C
    20ns/144ns
  • Element Configuration
    Single
  • Max Collector Current
    80A
  • Max Power Dissipation
    268W
  • Operating Temperature
    -55°C~175°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Reach Compliance Code
    not_compliant
  • Reverse Recovery Time
    43 ns
  • Number of Terminations
    3
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2.3V @ 15V, 40A
  • Gate-Emitter Voltage-Max
    20V
  • Turn Off Time-Nom (toff)
    213 ns
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Gate-Emitter Thr Voltage-Max
    7.5V
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Collector Emitter Voltage (VCEO)
    650V
  • Current - Collector Pulsed (Icm)
    120A
  • Collector Emitter Breakdown Voltage
    650V
  • Collector Emitter Saturation Voltage
    2.1V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

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  • Delivery Time

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