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FGH50N3

  • Available: 450

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $12.35364US $12.35
10+US $11.11828US $111.18
30+US $8.64755US $259.43
100+US $7.10334US $710.33
500+US $6.79450US $3397.25
1000+US $6.17682US $6176.82

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    FGH50N3
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    4.82mm
  • Height
    20.82mm
  • Length
    15.87mm
  • Weight
    6.39g
  • HTS Code
    8541.29.00.95
  • IGBT Type
    PT
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2002
  • Rise Time
    15ns
  • Input Type
    Standard
  • Gate Charge
    180nC
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    32 ns
  • Mounting Type
    Through Hole
  • Current Rating
    75A
  • Number of Pins
    3
  • Package / Case
    TO-247-3
  • Test Condition
    180V, 30A, 5 Ω, 15V
  • Case Connection
    COLLECTOR
  • Terminal Finish
    Tin (Sn)
  • Lifecycle Status
    ACTIVE (Last Updated: 5 days ago)
  • Switching Energy
    130μJ (on), 92μJ (off)
  • Factory Lead Time
    4 Weeks
  • Power Dissipation
    463W
  • Additional Feature
    LOW CONDUCTION LOSS
  • Number of Elements
    1
  • Turn On Delay Time
    20 ns
  • Voltage - Rated DC
    300V
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    20ns/135ns
  • Turn-Off Delay Time
    135 ns
  • Element Configuration
    Single
  • Max Collector Current
    75A
  • Max Power Dissipation
    463W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Number of Terminations
    3
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    1.4V @ 15V, 30A
  • Gate-Emitter Voltage-Max
    20V
  • Turn Off Time-Nom (toff)
    162 ns
  • Transistor Element Material
    SILICON
  • Gate-Emitter Thr Voltage-Max
    5.5V
  • Collector Emitter Voltage (VCEO)
    300V
  • Current - Collector Pulsed (Icm)
    240A
  • Collector Emitter Breakdown Voltage
    300V
  • Collector Emitter Saturation Voltage
    1.3V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    Not Applicable

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