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FGP20N60UFDTU

  • Available: 952

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.94000US $2.94
10+US $2.64600US $26.46
30+US $2.05800US $61.74
100+US $1.69050US $169.05
500+US $1.61700US $808.50
1000+US $1.47000US $1470.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    FGP20N60UFDTU
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    4.83mm
  • Height
    16.51mm
  • Length
    10.67mm
  • Weight
    1.8g
  • HTS Code
    8541.29.00.95
  • IGBT Type
    Field Stop
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2008
  • Input Type
    Standard
  • Gate Charge
    63nC
  • Part Status
    Active
  • Pbfree Code
    yes
  • Power - Max
    165W
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    29 ns
  • JEDEC-95 Code
    TO-220AB
  • Mounting Type
    Through Hole
  • Number of Pins
    3
  • Package / Case
    TO-220-3
  • Test Condition
    400V, 20A, 10 Ω, 15V
  • Contact Plating
    Tin
  • Lifecycle Status
    ACTIVE (Last Updated: 1 week ago)
  • Switching Energy
    380μJ (on), 260μJ (off)
  • Factory Lead Time
    16 Weeks
  • Fall Time-Max (tf)
    64ns
  • Number of Elements
    1
  • Turn On Delay Time
    13 ns
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    13ns/87ns
  • Turn-Off Delay Time
    87 ns
  • Element Configuration
    Single
  • Max Collector Current
    40A
  • Max Power Dissipation
    165W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    35 ns
  • Number of Terminations
    3
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2.4V @ 15V, 20A
  • Gate-Emitter Voltage-Max
    20V
  • Turn Off Time-Nom (toff)
    155 ns
  • Transistor Element Material
    SILICON
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • Collector Emitter Voltage (VCEO)
    600V
  • Current - Collector Pulsed (Icm)
    60A
  • Collector Emitter Breakdown Voltage
    600V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    Not Applicable

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