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FGY75N60SMD

  • In Stock: 1000
  • Available: 14276

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $21.82180US $21.82
10+US $16.36635US $163.66
30+US $14.18417US $425.53
100+US $12.54753US $1254.75
500+US $11.78377US $5891.89
1000+US $10.91090US $10910.90

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

Quick RFQ

Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    FGY75N60SMD
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    4.82mm
  • Height
    20.32mm
  • Length
    15.87mm
  • Weight
    7.629g
  • HTS Code
    8541.29.00.95
  • IGBT Type
    Field Stop
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2010
  • Input Type
    Standard
  • Gate Charge
    248nC
  • Part Status
    Active
  • Pbfree Code
    yes
  • Power - Max
    750W
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    76 ns
  • Mounting Type
    Through Hole
  • Number of Pins
    3
  • Package / Case
    TO-247-3 Variant
  • Test Condition
    400V, 75A, 3 Ω, 15V
  • Terminal Finish
    Tin (Sn)
  • Lifecycle Status
    ACTIVE (Last Updated: 8 hours ago)
  • Switching Energy
    2.3mJ (on), 770μJ (off)
  • Factory Lead Time
    6 Weeks
  • Additional Feature
    LOW CONDUCTION LOSS
  • Fall Time-Max (tf)
    29ns
  • Number of Elements
    1
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    24ns/136ns
  • Element Configuration
    Single
  • Max Collector Current
    150A
  • Max Power Dissipation
    750W
  • Operating Temperature
    -55°C~175°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    55 ns
  • Number of Terminations
    3
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 75A
  • Gate-Emitter Voltage-Max
    20V
  • Turn Off Time-Nom (toff)
    161 ns
  • Transistor Element Material
    SILICON
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • Collector Emitter Voltage (VCEO)
    600V
  • Current - Collector Pulsed (Icm)
    225A
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    1.9V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    Not Applicable

SHIPPING GUIDE

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  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

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