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FII50-12E

  • Available: 3521

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.00000US $0.00

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Product Parameter

  • Manufacturer
    IXYS
  • Manufacturer's Part No.
    FII50-12E
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Arrays
  • Series
    -
  • ECCN
    EAR99
  • Input
    Standard
  • Mount
    Through Hole
  • IGBT Type
    NPT
  • Pin Count
    5
  • Published
    2003
  • Part Status
    Obsolete
  • Power - Max
    200W
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    135 ns
  • Configuration
    Half Bridge
  • Mounting Type
    Through Hole
  • NTC Thermistor
    No
  • Package / Case
    i4-Pac™-5
  • Case Connection
    ISOLATED
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Input Capacitance
    2nF
  • Terminal Position
    SINGLE
  • Number of Elements
    2
  • Element Configuration
    Dual
  • Max Collector Current
    50A
  • Max Power Dissipation
    200W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Number of Terminations
    5
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2.6V @ 15V, 30A
  • Gate-Emitter Voltage-Max
    20V
  • Turn Off Time-Nom (toff)
    490 ns
  • Transistor Element Material
    SILICON
  • Input Capacitance (Cies) @ Vce
    2nF @ 25V
  • Collector Emitter Voltage (VCEO)
    2.6V
  • Current - Collector Cutoff (Max)
    400μA
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Voltage - Collector Emitter Breakdown (Max)
    1200V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    RoHS Compliant
  • JESD-30 Code
    R-PSIP-T5
  • JESD-609 Code
    e1
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

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  • Delivery Time

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