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FNB43060T2
- Manufacturer's Part No.:FNB43060T2
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- Series:Motion SPM® 45
- Description:MODULE SPM 600V 30A SPMAB
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- Quantity:RFQAdd to RFQ List
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- In Stock: 6008
- Available: 4458
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $31.76000 | US $31.76 |
10+ | US $23.82000 | US $238.20 |
30+ | US $20.64400 | US $619.32 |
100+ | US $18.26200 | US $1826.20 |
500+ | US $17.15040 | US $8575.20 |
1000+ | US $15.88000 | US $15880.00 |
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- Description
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- Shopping Guide
The FNB43060T2 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. This device is designed for a variety of applications, including power management, switching, and amplification in electronic circuits.
Key Features:
- Type: N-channel MOSFET
- Voltage Rating: The FNB43060T2 typically has a maximum drain-source voltage (V_DS) rating of around 60V, making it suitable for medium-voltage applications.
- Current Rating: It can handle a continuous drain current (I_D) of approximately 43A, which allows it to manage significant power loads effectively.
- R_DS(on): The on-resistance (R_DS(on)) is low, typically around 10 mΩ at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power loss during operation, enhancing efficiency.
- Gate Threshold Voltage (V_GS(th)): The threshold voltage is usually in the range of 2V to 4V, which indicates the voltage required to turn the MOSFET on.
- Package Type: The FNB43060T2 is available in a TO-220 package, which provides good thermal performance and is suitable for heat dissipation in high-power applications.
- Thermal Resistance: The thermal resistance from junction to case (RθJC) is low, allowing for effective heat management during operation.
- Switching Speed: The device features fast switching capabilities, making it ideal for high-frequency applications.
Applications:
- Power Supply Circuits: Used in DC-DC converters and power management systems.
- Motor Control: Suitable for driving motors in various applications, including automotive and industrial.
- Lighting Control: Can be used in LED drivers and lighting control systems.
- Consumer Electronics: Employed in power amplifiers and other consumer electronic devices.
Electrical Characteristics:
- Maximum Gate-Source Voltage (V_GS): Typically rated at ±20V, ensuring safe operation within specified limits.
- Body Diode Characteristics: The FNB43060T2 includes an intrinsic body diode, which can conduct current in the reverse direction, useful in applications requiring flyback or freewheeling diodes.
Conclusion:
The FNB43060T2 from ON Semiconductor is a robust and efficient N-channel MOSFET that is well-suited for a wide range of applications requiring reliable switching and power management. Its combination of high current handling, low on-resistance, and good thermal performance makes it a popular choice among engineers and designers in the electronics industry.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
SHIPPING GUIDE
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