FQA40N25
- Manufacturer's Part No.:FQA40N25
- Manufacturer:
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- Series:QFET®
- Description:MOSFET N-CH 250V 40A TO-3P
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- Quantity:Buy NowAdd to Cart
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- In Stock: 5000
- Available: 21062
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $4.00400 | US $4.00 |
10+ | US $3.60360 | US $36.04 |
30+ | US $2.80280 | US $84.08 |
100+ | US $2.30230 | US $230.23 |
500+ | US $2.20220 | US $1101.10 |
1000+ | US $2.00200 | US $2002.00 |
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- Description
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- Shopping Guide
The FQA40N25 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for various applications, including power management, switching, and amplification in electronic circuits.
Key Features:
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Voltage Rating: The FQA40N25 has a maximum drain-source voltage (V_DS) of 250V, making it suitable for high-voltage applications.
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Current Rating: It can handle a continuous drain current (I_D) of up to 40A, which allows it to manage significant power loads effectively.
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R_DS(on): The on-resistance (R_DS(on)) is typically low, around 0.1 ohms at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power loss during operation, enhancing efficiency.
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Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2V to 4V, which indicates the voltage required to turn the MOSFET on. This feature allows for compatibility with various control circuits.
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Package Type: The FQA40N25 is typically available in a TO-220 package, which provides good thermal performance and is easy to mount on heat sinks for effective heat dissipation.
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Thermal Characteristics: The device has a maximum junction temperature (T_J) of 150°C, allowing it to operate in demanding thermal environments. Its thermal resistance from junction to case (RθJC) is low, facilitating efficient heat transfer.
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Switching Speed: The FQA40N25 exhibits fast switching capabilities, making it suitable for high-frequency applications. This characteristic is essential for applications like DC-DC converters and motor control.
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Applications: Common applications include power supplies, motor drivers, and other power management systems where efficient switching and high current handling are required.
Electrical Characteristics:
- Gate-Source Voltage (V_GS): ±20V maximum
- Drain-Source Breakdown Voltage (V(BR)DSS): 250V minimum
- Total Gate Charge (Q_g): Typically around 60 nC, which affects the drive requirements for the gate.
Conclusion:
The FQA40N25 from ON Semiconductor is a robust and efficient N-channel MOSFET that is well-suited for high-voltage and high-current applications. Its combination of low on-resistance, high current capacity, and fast switching speeds makes it a popular choice among engineers for designing reliable and efficient electronic systems.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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