Image is for your reference only, please check specifications for details
iconCompare
icon

FQA40N25

  • In Stock: 5000
  • Available: 21062

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $4.00400US $4.00
10+US $3.60360US $36.04
30+US $2.80280US $84.08
100+US $2.30230US $230.23
500+US $2.20220US $1101.10
1000+US $2.00200US $2002.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

Quick RFQ
  • Description
  • Alternatives
  • Shopping Guide
Description

The FQA40N25 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for various applications, including power management, switching, and amplification in electronic circuits.

Key Features:

  1. Voltage Rating: The FQA40N25 has a maximum drain-source voltage (V_DS) of 250V, making it suitable for high-voltage applications.

  2. Current Rating: It can handle a continuous drain current (I_D) of up to 40A, which allows it to manage significant power loads effectively.

  3. R_DS(on): The on-resistance (R_DS(on)) is typically low, around 0.1 ohms at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power loss during operation, enhancing efficiency.

  4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2V to 4V, which indicates the voltage required to turn the MOSFET on. This feature allows for compatibility with various control circuits.

  5. Package Type: The FQA40N25 is typically available in a TO-220 package, which provides good thermal performance and is easy to mount on heat sinks for effective heat dissipation.

  6. Thermal Characteristics: The device has a maximum junction temperature (T_J) of 150°C, allowing it to operate in demanding thermal environments. Its thermal resistance from junction to case (RθJC) is low, facilitating efficient heat transfer.

  7. Switching Speed: The FQA40N25 exhibits fast switching capabilities, making it suitable for high-frequency applications. This characteristic is essential for applications like DC-DC converters and motor control.

  8. Applications: Common applications include power supplies, motor drivers, and other power management systems where efficient switching and high current handling are required.

Electrical Characteristics:

  • Gate-Source Voltage (V_GS): ±20V maximum
  • Drain-Source Breakdown Voltage (V(BR)DSS): 250V minimum
  • Total Gate Charge (Q_g): Typically around 60 nC, which affects the drive requirements for the gate.

Conclusion:

The FQA40N25 from ON Semiconductor is a robust and efficient N-channel MOSFET that is well-suited for high-voltage and high-current applications. Its combination of low on-resistance, high current capacity, and fast switching speeds makes it a popular choice among engineers for designing reliable and efficient electronic systems.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

SHIPPING GUIDE

  • Shipping Methods

    Rest assured that your orders will be handled by these trusted providers, such as DHL, FedEx, SF, and UPS.

  • Shipping Cost

    Shipping starts at $40 but varies for destinations like South Africa, Brazil, India, and more. The actual shipping charges depend on time zone, country, and package weight/volume.

  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

  • Professional Platform

  • Full-speed Delivery

  • Wide Variety of Products

  • 365 Days of Quality Assurance