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FQB34P10TM

  • In Stock: 3043
  • Available: 1662

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $6.97285US $6.97
10+US $6.27556US $62.76
30+US $4.88099US $146.43
100+US $4.00939US $400.94
500+US $3.83507US $1917.54
1000+US $3.48642US $3486.42

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

Quick RFQ

Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    FQB34P10TM
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    QFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    9.65mm
  • Height
    4.83mm
  • Length
    10.67mm
  • Weight
    1.31247g
  • FET Type
    P-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Published
    2017
  • Rise Time
    250ns
  • Vgs (Max)
    ±25V
  • Resistance
    60mOhm
  • Technology
    MOSFET (Metal Oxide)
  • Nominal Vgs
    4 V
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    Other Transistors
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Current Rating
    -34A
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    210 ns
  • Terminal Finish
    Tin (Sn)
  • Lifecycle Status
    ACTIVE (Last Updated: 22 hours ago)
  • Factory Lead Time
    4 Weeks
  • Power Dissipation
    3.75W
  • Threshold Voltage
    4V
  • Number of Elements
    1
  • Turn On Delay Time
    25 ns
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Voltage - Rated DC
    -100V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    160 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~175°C TJ
  • Power Dissipation-Max
    3.75W Ta 155W Tc
  • Number of Terminations
    2
  • Rds On (Max) @ Id, Vgs
    60m Ω @ 16.75A, 10V
  • Transistor Application
    SWITCHING
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    110nC @ 10V
  • Gate to Source Voltage (Vgs)
    25V
  • Avalanche Energy Rating (Eas)
    2200 mJ
  • Continuous Drain Current (ID)
    33.5mA
  • Drain to Source Voltage (Vdss)
    100V
  • Drain to Source Breakdown Voltage
    -100V
  • Input Capacitance (Ciss) (Max) @ Vds
    2910pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    33.5A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PSSO-G2
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

  • Shipping Methods

    Rest assured that your orders will be handled by these trusted providers, such as DHL, FedEx, SF, and UPS.

  • Shipping Cost

    Shipping starts at $40 but varies for destinations like South Africa, Brazil, India, and more. The actual shipping charges depend on time zone, country, and package weight/volume.

  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

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