FQB8P10TM
- Manufacturer's Part No.:FQB8P10TM
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:QFET®
- Description:P-Channel -100V 8A(Tc) 4V @ 250uA 530mΩ @ 4A,10V 3.75W D2-PAK MOSFET RoHS
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 800
- Available: 800
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $126.68400 | US $126.68 |
10+ | US $98.53200 | US $985.32 |
30+ | US $84.45600 | US $2533.68 |
100+ | US $77.41800 | US $7741.80 |
500+ | US $74.60280 | US $37301.40 |
1000+ | US $70.38000 | US $70380.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.FQB8P10TM
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesQFET®
- ECCNEAR99
- MountSurface Mount
- Weight1.31247g
- FET TypeP-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Rise Time110ns
- Vgs (Max)±30V
- Resistance530mOhm
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- Pbfree Codeyes
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating-8A
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Case ConnectionDRAIN
- Fall Time (Typ)35 ns
- Terminal FinishTin (Sn)
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time4 Weeks
- Power Dissipation3.75W
- Number of Elements1
- Turn On Delay Time11 ns
- Vgs(th) (Max) @ Id4V @ 250μA
- Voltage - Rated DC-100V
- Radiation HardeningNo
- Turn-Off Delay Time20 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max3.75W Ta 65W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs530m Ω @ 4A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)8A
- Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
- Gate to Source Voltage (Vgs)30V
- Continuous Drain Current (ID)8A
- Drain to Source Voltage (Vdss)100V
- Pulsed Drain Current-Max (IDM)32A
- Drain to Source Breakdown Voltage-100V
- Input Capacitance (Ciss) (Max) @ Vds470pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C8A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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