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FQD10N20LTM
- Manufacturer’s Part#:FQD10N20LTM
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:QFET®
- ECAD Model:
- Description:MOSFET N-CH 200V 7.6A DPAK
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 4430
- Available: 226092
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $10.01376 | US $10.01 |
10+ | US $9.01238 | US $90.12 |
30+ | US $7.00963 | US $210.29 |
100+ | US $5.75791 | US $575.79 |
500+ | US $5.50757 | US $2753.79 |
1000+ | US $5.00688 | US $5006.88 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part #FQD10N20LTM
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesQFET®
- ECCNEAR99
- MountSurface Mount
- Weight260.37mg
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Rise Time150ns
- Vgs (Max)±20V
- Resistance380MOhm
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating7.6A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Case ConnectionDRAIN
- Fall Time (Typ)95 ns
- Terminal FinishTin (Sn)
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time4 Weeks
- Power Dissipation2.5W
- Number of Elements1
- Turn On Delay Time13 ns
- Vgs(th) (Max) @ Id2V @ 250μA
- Voltage - Rated DC200V
- Turn-Off Delay Time50 ns
- Qualification StatusNot Qualified
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max2.5W Ta 51W Tc
- Reach Compliance Codenot_compliant
- Number of Terminations2
- Rds On (Max) @ Id, Vgs360m Ω @ 3.8A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs17nC @ 5V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)7.6A
- Peak Reflow Temperature (Cel)260
- Drain to Source Breakdown Voltage200V
- Input Capacitance (Ciss) (Max) @ Vds830pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Current - Continuous Drain (Id) @ 25°C7.6A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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