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FQD2N100TM
- Manufacturer's Part No.:FQD2N100TM
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:QFET®
- Description:MOSFET N-CH 1000V 1.6A DPAK
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 20000
- Available: 155193
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.63020 | US $1.63 |
10+ | US $1.08680 | US $10.87 |
30+ | US $0.81510 | US $24.45 |
100+ | US $0.65208 | US $65.21 |
500+ | US $0.59774 | US $298.87 |
1000+ | US $0.54340 | US $543.40 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.FQD2N100TM
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesQFET®
- ECCNEAR99
- MountSurface Mount
- Width6.1mm
- Height2.517mm
- Length6.6mm
- Weight260.37mg
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2013
- Rise Time30ns
- Vgs (Max)±30V
- Resistance9Ohm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs5 V
- Part StatusActive
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating1.6A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Case ConnectionDRAIN
- Contact PlatingTin
- Fall Time (Typ)35 ns
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time10 Weeks
- Power Dissipation2.5W
- Threshold Voltage5V
- Number of Channels1
- Number of Elements1
- Turn On Delay Time13 ns
- Vgs(th) (Max) @ Id5V @ 250μA
- Voltage - Rated DC900V
- Radiation HardeningNo
- Turn-Off Delay Time25 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max2.5W Ta 50W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs9 Ω @ 800mA, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs15.5nC @ 10V
- Gate to Source Voltage (Vgs)30V
- Continuous Drain Current (ID)1.6A
- Max Junction Temperature (Tj)150°C
- Drain to Source Voltage (Vdss)1000V
- Pulsed Drain Current-Max (IDM)6.4A
- Drain to Source Breakdown Voltage1kV
- Input Capacitance (Ciss) (Max) @ Vds520pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C1.6A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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