FQD2N60CTM

The FQD2N60CTM is a high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. This device is designed for applications requiring efficient switching and high-speed performance, making it suitable for power management, motor control, and other high-voltage applications.

Key Features:

1. Voltage Rating: The FQD2N60CTM has a maximum drain-source voltage (V_DS) of 600 volts, allowing it to handle high-voltage applications effectively.

2. Current Rating: It can handle a continuous drain current (I_D) of up to 2.0 amperes, making it suitable for various power applications.

3. R_DS(on): The on-resistance (R_DS(on)) is typically low, which minimizes power loss during operation. This characteristic is crucial for enhancing efficiency in power conversion applications.

4. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is in the range of 2 to 4 volts, which allows for easy interfacing with low-voltage control circuits.

5. Package Type: The FQD2N60CTM is available in a TO-220 package, which provides good thermal performance and is easy to mount on heat sinks for effective heat dissipation.

6. Fast Switching Speed: The device is designed for fast switching, which is essential for applications like switch-mode power supplies (SMPS) and other high-frequency circuits.

7. Thermal Characteristics: The TO-220 package allows for efficient heat dissipation, with a thermal resistance junction-to-case (RθJC) that supports reliable operation under high load conditions.

Applications:

• Power Supplies: Ideal for use in switch-mode power supplies where high efficiency and fast switching are required.
• Motor Control: Suitable for driving motors in various applications, including industrial automation and consumer electronics.
• Lighting: Can be used in LED drivers and other lighting applications where high voltage and current handling are necessary.
• Inverters: Effective in inverter circuits for renewable energy systems, such as solar inverters.

Electrical Characteristics:

• Maximum Gate-Source Voltage (V_GS): ±20 volts, ensuring safe operation within specified limits.
• Body Diode Characteristics: The FQD2N60CTM features an intrinsic body diode, which allows for reverse conduction and can be beneficial in certain applications.

Conclusion:

The FQD2N60CTM from ON Semiconductor is a robust and versatile N-channel MOSFET that combines high voltage and current ratings with low on-resistance and fast switching capabilities. Its design makes it an excellent choice for a wide range of power management applications, ensuring efficiency and reliability in demanding environments.