FQD3P50TM

The FQD3P50TM is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for high-efficiency switching applications, making it suitable for use in power management circuits, DC-DC converters, and other power electronic systems.

Key Features:

1. Type: The FQD3P50TM is a P-channel MOSFET, which means it conducts when a negative voltage is applied to its gate relative to its source. This characteristic is essential for applications where high-side switching is required.

2. Voltage Rating: The device has a maximum drain-source voltage (V_DS) rating of 50V, allowing it to handle a wide range of voltage applications without risk of breakdown.

3. Current Rating: It can handle a continuous drain current (I_D) of up to 3.5A, making it suitable for moderate power applications.

4. R_DS(on): The on-resistance (R_DS(on)) is typically low, around 0.15 ohms at a gate-source voltage (V_GS) of -10V. This low on-resistance contributes to reduced power losses during operation, enhancing overall efficiency.

5. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically in the range of -1V to -3V, which indicates the voltage required to turn the MOSFET on. This feature allows for compatibility with various control circuits.

6. Package Type: The FQD3P50TM is available in a TO-220 package, which provides good thermal performance and ease of mounting. The TO-220 package is widely used in power applications due to its ability to dissipate heat effectively.

7. Thermal Characteristics: The device has a maximum junction temperature (T_J) rating of 150°C, allowing it to operate in high-temperature environments. The thermal resistance from junction to case (RθJC) is low, facilitating efficient heat dissipation.

8. Applications: The FQD3P50TM is suitable for various applications, including:

   • Power management circuits
   • DC-DC converters
   • Motor control
   • Load switching
   • Battery management systems

Electrical Characteristics:

• V_DS (Max): 50V
• I_D (Max): 3.5A
• R_DS(on): 0.15Ω (at V_GS = -10V)
• V_GS(th): -1V to -3V
• T_J (Max): 150°C

Conclusion:

The FQD3P50TM from ON Semiconductor is a versatile P-channel MOSFET that offers a combination of high voltage and current ratings, low on-resistance, and robust thermal performance. Its design makes it an excellent choice for a variety of power management and switching applications, ensuring efficiency and reliability in electronic circuits.