FQP47P06

The FQP47P06 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for high-efficiency switching applications and is particularly suitable for use in power management circuits, motor control, and other applications requiring high current handling and low on-resistance.

Key Features:

1. Type: N-channel MOSFET
2. Voltage Rating: The FQP47P06 has a maximum drain-source voltage (V_DS) of 60V, making it suitable for applications that operate within this voltage range.
3. Current Rating: It can handle a continuous drain current (I_D) of up to 47A at a case temperature of 25°C, which allows it to manage significant power loads.
4. On-Resistance: The on-resistance (R_DS(on)) is typically around 0.025 ohms at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses and improved efficiency during operation.
5. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically between 2V and 4V, which indicates the voltage required to turn the MOSFET on. This feature allows for compatibility with various control voltages.
6. Package Type: The FQP47P06 is available in a TO-220 package, which provides good thermal performance and ease of mounting on heat sinks for effective heat dissipation.
7. Thermal Resistance: The thermal resistance from junction to case (RθJC) is low, allowing for efficient heat transfer and management during operation.

Applications:

• Power Supply Circuits: Ideal for use in DC-DC converters and power supply designs where efficiency is critical.
• Motor Control: Suitable for driving motors in various applications, including robotics and industrial automation.
• Switching Regulators: Can be used in switching regulator designs to improve efficiency and reduce heat generation.
• Load Switching: Effective for switching high loads in consumer electronics and industrial equipment.

Electrical Characteristics:

• Maximum Gate-Source Voltage (V_GS): ±20V
• Maximum Pulsed Drain Current (I_D, pulsed): Up to 100A, allowing for brief high-current applications.
• Body Diode Characteristics: The FQP47P06 features an intrinsic body diode, which can conduct current in the reverse direction, useful in applications like synchronous rectification.

Conclusion:

The FQP47P06 from ON Semiconductor is a robust and efficient power MOSFET that is well-suited for a variety of high-current and high-voltage applications. Its low on-resistance, high current capacity, and thermal performance make it a popular choice among engineers designing power electronics systems.