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FQP4N20

  • Available: 272

Reference Price(In US Dollars)

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1+US $0.00000US $0.00

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    FQP4N20
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    QFET®
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Package / Case
    TO-220-3
  • Part Status
    Obsolete
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Subcategory
    FET General Purpose Power
  • Surface Mount
    NO
  • Number of Terminations
    3
  • Terminal Finish
    Tin (Sn)
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    compliant
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Published
    2000
  • Pbfree Code
    yes
  • HTS Code
    8541.29.00.95
  • JEDEC-95 Code
    TO-220AB
  • Mounting Type
    Through Hole
  • Transistor Element Material
    SILICON
  • Transistor Application
    SWITCHING
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    45W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Drain Current-Max (Abs) (ID)
    3.6A
  • Pulsed Drain Current-Max (IDM)
    15.2A
  • DS Breakdown Voltage-Min
    200V
  • Avalanche Energy Rating (Eas)
    52 mJ
  • Drain to Source Voltage (Vdss)
    200V
  • FET Type
    N-Channel
  • Vgs(th) (Max) @ Id
    5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    220pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    6.5nC @ 10V
  • Vgs (Max)
    ±30V
  • Current - Continuous Drain (Id) @ 25°C
    3.6A Tc
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    1.4 Ω @ 1.8A, 10V

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • JESD-609 Code
    e3
  • JESD-30 Code
    R-PSFM-T3

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