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FQPF8N80C

  • In Stock: 22015
  • Available: 30662

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $3.78000US $3.78
10+US $3.40200US $34.02
30+US $2.64600US $79.38
100+US $2.17350US $217.35
500+US $2.07900US $1039.50
1000+US $1.89000US $1890.00

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  • Description
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Description

The FQPF8N80C is a high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for applications that require efficient switching and high power handling capabilities. Here’s a detailed description of its key features and specifications:

Key Features:

  1. Voltage Rating: The FQPF8N80C has a maximum drain-source voltage (V_DS) of 800 volts, making it suitable for high-voltage applications.

  2. Current Rating: It can handle a continuous drain current (I_D) of up to 8 amps at a specified temperature, which allows it to be used in various power management applications.

  3. R_DS(on): The on-resistance (R_DS(on)) is typically low, around 0.85 ohms at a gate-source voltage (V_GS) of 10 volts. This low on-resistance contributes to reduced power losses during operation, enhancing overall efficiency.

  4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2 to 4 volts, which allows for easy drive with standard logic levels.

  5. Package Type: The FQPF8N80C is available in a TO-220 package, which provides good thermal performance and allows for easy heat dissipation. This package is commonly used in power applications due to its robust construction.

  6. Thermal Characteristics: The device has a maximum junction temperature (T_J) of 150 degrees Celsius, which allows it to operate in demanding environments. The thermal resistance from junction to case (RθJC) is low, facilitating effective heat management.

  7. Fast Switching: The FQPF8N80C is designed for fast switching applications, making it suitable for use in power supplies, motor control, and other high-frequency applications.

  8. Applications: Common applications include switch-mode power supplies (SMPS), DC-DC converters, inverters, and other power electronics where high efficiency and reliability are critical.

Electrical Characteristics:

  • V_DS (Max): 800V
  • I_D (Max): 8A
  • R_DS(on): 0.85Ω (at V_GS = 10V)
  • V_GS(th): 2V to 4V
  • T_J (Max): 150°C

Conclusion:

The FQPF8N80C from ON Semiconductor is a versatile and reliable N-channel MOSFET that is well-suited for high-voltage applications requiring efficient switching and thermal management. Its combination of high voltage rating, low on-resistance, and robust package design makes it an excellent choice for engineers looking to optimize power performance in their designs.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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