FQS4900TF
- Manufacturer's Part No.:FQS4900TF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:QFET®
- Description:MOSFET N/P-CH 60V/300V 8SOP
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Delivery:
- Available: 13
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.86510 | US $1.87 |
10+ | US $1.24340 | US $12.43 |
30+ | US $0.93255 | US $27.98 |
100+ | US $0.74604 | US $74.60 |
500+ | US $0.68387 | US $341.94 |
1000+ | US $0.62170 | US $621.70 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.FQS4900TF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesQFET®
- ECCNEAR99
- MountSurface Mount
- Weight230.4mg
- FET TypeN and P-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2002
- Rise Time25ns
- FET FeatureStandard
- Part StatusActive
- Pbfree Codeyes
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ)47 ns
- Terminal FinishTin (Sn)
- Base Part NumberFQS4900
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time13 Weeks
- Power Dissipation2W
- Terminal PositionDUAL
- Number of Elements2
- Vgs(th) (Max) @ Id1.95V @ 20mA
- Turn-Off Delay Time35 ns
- Qualification StatusNot Qualified
- Max Power Dissipation2W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Number of Terminations8
- Rds On (Max) @ Id, Vgs550m Ω @ 650mA, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs2.1nC @ 5V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)1.3A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain to Source Voltage (Vdss)60V 300V
- Drain-source On Resistance-Max0.65Ohm
- Pulsed Drain Current-Max (IDM)5.2A
- Drain to Source Breakdown Voltage-300V
- Current - Continuous Drain (Id) @ 25°C1.3A 300mA
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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