FQT3P20TF
- Manufacturer's Part No.:FQT3P20TF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:QFET®
- Description:MOSFET P-CH 200V 0.67A SOT-223
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- Delivery:
- In Stock: 14000
- Available: 344906
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.64670 | US $1.65 |
10+ | US $1.09780 | US $10.98 |
30+ | US $0.82335 | US $24.70 |
100+ | US $0.65868 | US $65.87 |
500+ | US $0.60379 | US $301.90 |
1000+ | US $0.54890 | US $548.90 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.FQT3P20TF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesQFET®
- ECCNEAR99
- MountSurface Mount
- Width3.56mm
- Height1.6mm
- Length6.5mm
- Weight188mg
- FET TypeP-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2001
- Rise Time35ns
- Vgs (Max)±30V
- Resistance2.7Ohm
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- Pbfree Codeyes
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating-670mA
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-261-4, TO-261AA
- Case ConnectionDRAIN
- Fall Time (Typ)25 ns
- Terminal FinishTin (Sn)
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time18 Weeks
- Power Dissipation2.5W
- Terminal PositionDUAL
- Number of Elements1
- Turn On Delay Time8.5 ns
- Vgs(th) (Max) @ Id5V @ 250μA
- Voltage - Rated DC-200V
- Radiation HardeningNo
- Turn-Off Delay Time12 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max2.5W Tc
- Number of Terminations4
- Rds On (Max) @ Id, Vgs2.7 Ω @ 335mA, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)0.67A
- Gate Charge (Qg) (Max) @ Vgs8nC @ 10V
- Gate to Source Voltage (Vgs)30V
- Continuous Drain Current (ID)670mA
- Drain to Source Voltage (Vdss)200V
- Pulsed Drain Current-Max (IDM)2.7A
- Drain to Source Breakdown Voltage-200V
- Input Capacitance (Ciss) (Max) @ Vds250pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C670mA Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PDSO-G4
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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