FQT3P20TF
- Manufacturer's Part No.:FQT3P20TF
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- In Stock: 14000
- Available: 1715
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.64670 | US $1.65 |
10+ | US $1.09780 | US $10.98 |
30+ | US $0.82335 | US $24.70 |
100+ | US $0.65868 | US $65.87 |
500+ | US $0.60379 | US $301.90 |
1000+ | US $0.54890 | US $548.90 |
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The FQT3P20TF is a P-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Rectron. This MOSFET is designed for power management applications where low on-state resistance and high efficiency are critical. With its P-channel configuration, the FQT3P20TF allows for the control of negative voltage signals or the sourcing of positive voltage signals in electronic circuits. The MOSFET is housed in a TO-220F package, providing robustness and thermal efficiency for various power applications.
Features:
- P-Channel Enhancement Mode: Allows for control of negative voltage signals or sourcing of positive voltage signals.
- Low On-State Resistance (RDS(ON)): Minimizes voltage drop across the MOSFET, reducing power dissipation and improving efficiency.
- High Current Capability: Handles high current levels, suitable for power switching applications.
- Thermal Efficiency: TO-220F package design enhances heat dissipation and ensures reliable operation in high-power environments.
- Fast Switching Speed: Enables rapid switching transitions for efficient power management.
- Robust Construction: Designed to withstand voltage and current stresses in demanding applications.
- RoHS Compliant: Manufactured in compliance with RoHS directives for environmental sustainability.
Applications:
- Power Switching Circuits
- Motor Control
- Battery Management Systems
- DC-DC Converters
- Voltage Regulation
- Electronic Loads
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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