FQT4N20LTF

The FQT4N20LTF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for high-efficiency switching applications, making it suitable for various power management tasks in electronic circuits.

Key Features:

1. Type: N-channel MOSFET

   • The FQT4N20LTF is an N-channel device, which means it conducts when a positive voltage is applied to the gate relative to the source.

2. Voltage Rating:

   • The maximum drain-source voltage (V_DS) is typically rated at 200V, allowing it to handle high-voltage applications.

3. Current Rating:

   • The continuous drain current (I_D) is rated at 4A, which indicates the maximum current the device can handle under specified conditions.

4. R_DS(on):

   • The on-resistance (R_DS(on)) is low, typically around 0.5 ohms at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power loss during operation, enhancing efficiency.

5. Gate Threshold Voltage (V_GS(th)):

   • The gate threshold voltage is in the range of 2V to 4V, which is the minimum gate voltage required to turn the MOSFET on.

6. Package Type:

   • The FQT4N20LTF is available in a TO-220 package, which is a common package type for power devices. This package provides good thermal performance and allows for easy mounting on heatsinks.

7. Thermal Characteristics:

   • The device has a maximum junction temperature (T_J) rating of 150°C, which indicates its ability to operate in high-temperature environments.

8. Applications:

   • The FQT4N20LTF is suitable for a variety of applications, including power supplies, motor control, and other switching applications where efficiency and thermal management are critical.

9. Switching Speed:

   • The device is designed for fast switching, making it ideal for applications that require rapid on/off control.

Electrical Characteristics:

• Input Capacitance (C_iss): This parameter indicates the capacitance between the gate and source terminals, affecting the switching speed.
• Output Capacitance (C_oss): This is the capacitance between the drain and source, which also influences the switching characteristics.
• Reverse Transfer Capacitance (C_rss): This is the capacitance between the gate and drain, which can affect the device's performance in high-frequency applications.

Conclusion:

The FQT4N20LTF from ON Semiconductor is a robust and efficient N-channel MOSFET suitable for a wide range of power applications. Its high voltage and current ratings, combined with low on-resistance and good thermal performance, make it an excellent choice for designers looking to optimize power management in their circuits.