FQT7N10TF
- Manufacturer's Part No.:FQT7N10TF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:QFET®
- Description:MOSFET N-CH 100V 1.7A SOT-223
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- Delivery:
- In Stock: 2300
- Available: 449232
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.59700 | US $0.60 |
10+ | US $0.39800 | US $3.98 |
30+ | US $0.29850 | US $8.96 |
100+ | US $0.23880 | US $23.88 |
500+ | US $0.21890 | US $109.45 |
1000+ | US $0.19900 | US $199.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.FQT7N10TF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesQFET®
- ECCNEAR99
- MountSurface Mount
- Width3.7mm
- Height1.7mm
- Length6.7mm
- Weight188mg
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2001
- Rise Time24ns
- Vgs (Max)±25V
- Resistance350mOhm
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating-1A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-261-4, TO-261AA
- Case ConnectionDRAIN
- Fall Time (Typ)19 ns
- Terminal FinishTin (Sn)
- Lifecycle StatusACTIVE (Last Updated: 5 days ago)
- Factory Lead Time17 Weeks
- Power Dissipation2W
- Terminal PositionDUAL
- Threshold Voltage4V
- Number of Elements1
- Turn On Delay Time7 ns
- Vgs(th) (Max) @ Id4V @ 250μA
- Voltage - Rated DC-100V
- Radiation HardeningNo
- Turn-Off Delay Time13 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max2W Tc
- Number of Terminations4
- Rds On (Max) @ Id, Vgs350m Ω @ 850mA, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs7.5nC @ 10V
- Gate to Source Voltage (Vgs)25V
- Avalanche Energy Rating (Eas)50 mJ
- Continuous Drain Current (ID)1.7A
- Pulsed Drain Current-Max (IDM)6.8A
- Drain to Source Breakdown Voltage100V
- Input Capacitance (Ciss) (Max) @ Vds250pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C1.7A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PDSO-G4
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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