FQT7N10TF
- Manufacturer's Part No.:FQT7N10TF
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- Series:QFET®
- Description:MOSFET N-CH 100V 1.7A SOT-223
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- In Stock: 2300
- Available: 449232
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.59700 | US $0.60 |
10+ | US $0.39800 | US $3.98 |
30+ | US $0.29850 | US $8.96 |
100+ | US $0.23880 | US $23.88 |
500+ | US $0.21890 | US $109.45 |
1000+ | US $0.19900 | US $199.00 |
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- Description
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The FQT7N10TF is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for various applications, including power management, switching, and amplification in electronic circuits.
Key Features:
- Type: N-channel MOSFET
- Voltage Rating: The FQT7N10TF has a maximum drain-source voltage (V_DS) of 100V, making it suitable for high-voltage applications.
- Current Rating: It can handle a continuous drain current (I_D) of up to 7A, which allows it to manage significant power loads.
- R_DS(on): The on-resistance (R_DS(on)) is typically low, around 0.15 ohms at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses during operation.
- Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically in the range of 2V to 4V, which indicates the voltage required to turn the MOSFET on.
- Package Type: The FQT7N10TF is available in a TO-220 package, which provides good thermal performance and is suitable for heat dissipation in high-power applications.
- Thermal Resistance: The thermal resistance from junction to case (RθJC) is low, allowing for efficient heat management during operation.
Applications:
The FQT7N10TF is commonly used in:
- Power Supply Circuits: It can be utilized in switch-mode power supplies (SMPS) for efficient power conversion.
- Motor Control: The MOSFET is suitable for driving motors in various applications, including robotics and industrial automation.
- Lighting Control: It can be used in LED drivers and dimmers for efficient lighting control.
- Audio Amplifiers: The device can be employed in audio amplification circuits due to its high-speed switching capabilities.
Electrical Characteristics:
- Maximum Gate-Source Voltage (V_GS): ±20V
- Maximum Power Dissipation (P_D): Typically around 50W, depending on the thermal management.
- Safe Operating Area (SOA): The FQT7N10TF has a defined safe operating area, ensuring reliable performance under specified conditions.
Conclusion:
The FQT7N10TF from ON Semiconductor is a robust and versatile N-channel MOSFET that offers excellent performance for a wide range of applications. Its high voltage and current ratings, combined with low on-resistance and good thermal characteristics, make it an ideal choice for engineers looking to design efficient and reliable electronic systems.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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