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FSBB30CH60C
- Manufacturer's Part No.:FSBB30CH60C
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:Motion SPM® 3
- Description:MODULE SPM 600V 30A SPMCC
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- Delivery:
- In Stock: 5170
- Available: 3628
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $30.95400 | US $30.95 |
10+ | US $23.21550 | US $232.15 |
30+ | US $20.12010 | US $603.60 |
100+ | US $17.79855 | US $1779.85 |
500+ | US $16.71516 | US $8357.58 |
1000+ | US $15.47700 | US $15477.00 |
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- Description
- Alternatives
- Shopping Guide
The FSBB30CH60C is a high-performance, insulated gate bipolar transistor (IGBT) module manufactured by ON Semiconductor. This device is designed for use in various applications, including motor drives, power inverters, and other high-power switching applications.
Key Features:
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Voltage and Current Ratings:
- The FSBB30CH60C is rated for a maximum collector-emitter voltage (V_CE) of 600 volts and a continuous collector current (I_C) of 30 amperes. This makes it suitable for high-voltage applications.
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Package Type:
- The module is housed in a compact, thermally efficient package that facilitates easy mounting and heat dissipation. The package design typically includes a baseplate for enhanced thermal management.
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Switching Performance:
- The IGBT features low switching losses, which contribute to improved efficiency in power conversion applications. It is designed to operate at high frequencies, making it suitable for applications requiring rapid switching.
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Thermal Characteristics:
- The FSBB30CH60C is designed to handle significant thermal loads, with a low thermal resistance from junction to case. This allows for effective heat dissipation, which is critical in maintaining performance and reliability in high-power applications.
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Integrated Diode:
- The module includes a built-in freewheeling diode, which provides reverse recovery characteristics that are beneficial for applications involving inductive loads. This diode helps to manage the energy during the turn-off phase of the IGBT.
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Gate Drive Requirements:
- The device has specific gate drive requirements that ensure optimal performance. It typically requires a gate voltage of around 15V for turn-on and a negative gate voltage for turn-off, which helps to minimize the risk of false triggering.
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Applications:
- The FSBB30CH60C is widely used in various applications, including:
- Motor control systems (e.g., inverters for AC motors)
- Power supplies
- Renewable energy systems (e.g., solar inverters)
- Industrial automation and robotics
- The FSBB30CH60C is widely used in various applications, including:
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Reliability and Longevity:
- ON Semiconductor emphasizes the reliability of the FSBB30CH60C, making it suitable for demanding environments. The module is designed to withstand high temperatures and electrical stresses, contributing to a longer operational life.
Summary:
The FSBB30CH60C from ON Semiconductor is a robust IGBT module that combines high voltage and current ratings with excellent thermal management and switching performance. Its integrated features and reliability make it an ideal choice for a variety of high-power applications, particularly in industrial and renewable energy sectors.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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