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FT150R12KE3G_B4

  • Available: 1813

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.00000US $0.00

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    FT150R12KE3G_B4
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Modules
  • Series
    -
  • ECCN
    EAR99
  • Input
    Standard
  • Mount
    Screw
  • Pin Count
    39
  • VCEsat-Max
    2.15 V
  • Part Status
    Obsolete
  • Power - Max
    700W
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    350 ns
  • Configuration
    Three Phase Inverter
  • Mounting Type
    Chassis Mount
  • Terminal Form
    UNSPECIFIED
  • NTC Thermistor
    Yes
  • Number of Pins
    39
  • Package / Case
    Module
  • Case Connection
    ISOLATED
  • Terminal Finish
    TIN LEAD
  • Terminal Position
    UPPER
  • Number of Elements
    3
  • Radiation Hardening
    No
  • Max Collector Current
    200A
  • Operating Temperature
    150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Number of Terminations
    39
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2.15V @ 15V, 150A
  • Gate-Emitter Voltage-Max
    20V
  • Turn Off Time-Nom (toff)
    850 ns
  • Power Dissipation-Max (Abs)
    700W
  • Transistor Element Material
    SILICON
  • Input Capacitance (Cies) @ Vce
    10.5nF @ 25V
  • Collector Emitter Voltage (VCEO)
    1.2kV
  • Current - Collector Cutoff (Max)
    5mA
  • Voltage - Collector Emitter Breakdown (Max)
    1200V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS Compliant
  • JESD-609 Code
    e0
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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  • Delivery Time

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