G2R1000MT17D
- Manufacturer's Part No.:G2R1000MT17D
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:SIC MOSFET N-CH 4A TO247-3
- Quantity:Buy NowAdd to Cart
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- Delivery:
- In Stock: 14032
- Available: 1000
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $6.16000 | US $6.16 |
10+ | US $5.54400 | US $55.44 |
30+ | US $4.31200 | US $129.36 |
100+ | US $3.54200 | US $354.20 |
500+ | US $3.38800 | US $1694.00 |
1000+ | US $3.08000 | US $3080.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerGeneSiC Semiconductor
- Manufacturer's Part No.G2R1000MT17D
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- Series
- Product StatusActive
- FET TypeN-Channel
- TechnologySiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)1700 V
- Current - Continuous Drain (Id) @ 25°C4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)20V
- Rds On (Max) @ Id, Vgs1.2Ohm @ 2A, 20V
- Vgs(th) (Max) @ Id4V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs-
- Vgs (Max)+20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds139 pF @ 1000 V
- FET Feature-
- Power Dissipation (Max)53W (Tc)
- Operating Temperature-55°C ~ 175°C (TJ)
- Mounting TypeThrough Hole
- Supplier Device PackageTO-247-3
- Package / CaseTO-247-3
Environmental & Export Classifications
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