G3R350MT12D
- Manufacturer's Part No.:G3R350MT12D
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:SIC MOSFET N-CH 11A TO247-3
- Quantity:RFQAdd to RFQ List
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- Available: 11806
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $6.83318 | US $6.83 |
10+ | US $6.14987 | US $61.50 |
30+ | US $4.78323 | US $143.50 |
100+ | US $3.92908 | US $392.91 |
500+ | US $3.75825 | US $1879.13 |
1000+ | US $3.41659 | US $3416.59 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerGeneSiC Semiconductor
- Manufacturer's Part No.G3R350MT12D
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- Series
- Product StatusActive
- FET TypeN-Channel
- TechnologySiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)1200 V
- Current - Continuous Drain (Id) @ 25°C11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)15V
- Rds On (Max) @ Id, Vgs420mOhm @ 4A, 15V
- Vgs(th) (Max) @ Id2.69V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs12 nC @ 15 V
- Vgs (Max)±15V
- Input Capacitance (Ciss) (Max) @ Vds334 pF @ 800 V
- FET Feature-
- Power Dissipation (Max)74W (Tc)
- Operating Temperature-55°C ~ 175°C (TJ)
- Mounting TypeThrough Hole
- Supplier Device PackageTO-247-3
- Package / CaseTO-247-3
Environmental & Export Classifications
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