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G3S12002C
- Manufacturer's Part No.:G3S12002C
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:SIC SCHOTTKY DIODE 1200V 2A 2-PI
- Quantity:RFQAdd to RFQ List
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- Delivery:
- Available: 24259
Reference Price(In US Dollars)
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1+ | US $4.08000 | US $4.08 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Quick RFQ
Product Parameter
- ManufacturerGlobal Power
- Manufacturer's Part No.G3S12002C
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesDiodes - Rectifiers - Single
- Series-
- MfrGlobal Power Technology-GPT
- ECCNEAR99
- SpeedNo Recovery Time > 500mA (Io)
- Diode TypeSilicon Carbide Schottky
- REACH StatusREACH info available upon request
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Capacitance @ Vr, F170pF @ 0V, 1MHz
- Supplier Device PackageTO-252
- Reverse Recovery Time (trr)0 ns
- Current - Reverse Leakage @ Vr50 μA @ 1200 V
- Voltage - DC Reverse (Vr) (Max)1200 V
- Current - Average Rectified (Io)8.8A
- Operating Temperature - Junction-55°C ~ 175°C
- Voltage - Forward (Vf) (Max) @ If1.7 V @ 2 A
Environmental & Export Classifications
- HTSUS8541.10.0080
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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