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G3S12002H

  • Available: 23424

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $4.08000US $4.08

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Product Parameter

  • Manufacturer
    Global Power
  • Manufacturer's Part No.
    G3S12002H
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Diodes - Rectifiers - Single
  • Series
    -
  • Mfr
    Global Power Technology-GPT
  • Speed
    No Recovery Time > 500mA (Io)
  • Diode Type
    Silicon Carbide Schottky
  • REACH Status
    Vendor Undefined
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-2 Full Pack
  • Capacitance @ Vr, F
    136pF @ 0V, 1MHz
  • Supplier Device Package
    TO-220F
  • Reverse Recovery Time (trr)
    0 ns
  • Current - Reverse Leakage @ Vr
    50 μA @ 1200 V
  • Voltage - DC Reverse (Vr) (Max)
    1200 V
  • Current - Average Rectified (Io)
    7.3A
  • Operating Temperature - Junction
    -55°C ~ 175°C
  • Voltage - Forward (Vf) (Max) @ If
    1.7 V @ 2 A

Environmental & Export Classifications

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